型号:

FQT13N06LTF

RoHS:无铅 / 符合
制造商:Fairchild Semiconductor描述:MOSFET N-CH 60V 2.8A SOT-223
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
FQT13N06LTF PDF
产品培训模块 High Voltage Switches for Power Processing
标准包装 1
系列 QFET™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 2.8A
开态Rds(最大)@ Id, Vgs @ 25° C 110 毫欧 @ 1.4A,10V
Id 时的 Vgs(th)(最大) 2.5V @ 250µA
闸电荷(Qg) @ Vgs 6.4nC @ 5V
输入电容 (Ciss) @ Vds 350pF @ 25V
功率 - 最大 2.1W
安装类型 表面贴装
封装/外壳 TO-261-4,TO-261AA
供应商设备封装 SOT-223-4
包装 剪切带 (CT)
其它名称 FQT13N06LTFCT
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